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| BFP540ESD NPN Silicon RF Transistor* * For ESD protected high gain low noise amplifier * Excellent ESD performance typical value 1000 V (HBM) * Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB * Gold metallization for high reliability * SIEGET 45 - Line * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! 3 4 1 2 Type BFP540ESD Maximum Ratings Parameter Marking AUs 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO Package SOT343 Value Unit - Collector-emitter voltage TA > 0C TA 0C V 4.5 4 Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 77C VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS 10 10 1 80 8 250 150 -65 ... 150 -65 ... 150 Value 290 Unit mA mW C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 2006-04-10 1 BFP540ESD Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured hFE 50 110 170 IEBO 10 A ICBO 100 nA ICES 10 A V(BR)CEO 4.5 5 V Symbol min. Values typ. max. Unit 2006-04-10 2 BFP540ESD Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 3GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, ZS = ZL = 50, f = 1.8GHz 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 21 - 30 0.14 0.24 GHz pF Ccb Cce - 0.41 - Ceb - 0.59 - F G ms 0.9 1.3 21.5 1.4 - dB dB G ma - 16 - dB |S21e|2 16 IP 3 P-1dB 18.5 14 24.5 11 - dB dBm 2006-04-10 3 BFP540ESD Total power dissipation Ptot = (TA; TS) Permissible Pulse Load RthJS = (t p) 10 3 300 250 K/W 200 RthJS 10 2 Ptot [mW] 150 100 50 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 0 25 50 75 100 125 150 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 T [C] S tp Permissible Pulse Load Ptotmax/P totDC = (tp) 10 1 Collector-base capacitance Ccb = (V CB) f = 1 MHz 0.3 Ptotmax / PtotDC 0.25 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.2 Ccb [pF] -2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 s 10 0 0 0 2 4 6 8 10 12 14 tp VCB [V] 2006-04-10 4 BFP540ESD Third order Intercept Point IP3 = (IC) (Output, ZS = ZL = 50 ) VCE = parameter, f = 900 MHz 30 30 Transition frequency fT = (IC) VCE = parameter in V, f = 2 GHz 25 4.00V 2.00V 25 3.00V 1.50V 20 20 3 - 4.5V IP3 [dBm] 15 fT [GHz] 1.00V 15 2.00V 10 10 1.00V 0.75V 5 5 0.50V 0 0 10 20 30 C 0 40 50 60 70 80 0 10 20 30 40 C 50 60 70 80 90 100 I [mA] I [mA] Power gain Gma, Gms = (f) VCE = 3 V, I C = 25 mA Power gain Gma, Gms = (IC) VCE = 3 V f = parameter in GHz 45 28 26 40 24 35 22 0.90GHz 30 20 Gms G [dB] 25 G [dB] 18 1.80GHz 16 20 14 2.40GHz 3.00GHz G 15 ma 12 |S | 21 2 10 4.00GHz 5.00GHz 6.00GHz 10 8 5 0 1 2 3 4 5 6 6 0 10 20 30 40 50 60 70 80 90 100 f [GHz] IC [mA] 2006-04-10 5 BFP540ESD Power gain Gma, Gms = (VCE) IC = 200 mA f = parameter in GHz 28 Noise figure F = (I C) VCE = 3 V, f = parameter in GHz ZS = ZSopt 5 0.90GHz 26 4.5 24 4 1.80GHz 22 3.5 20 3 2.40GHz G [dB] F [dB] 18 2.5 16 3.00GHz 2 14 4.00GHz 1.5 12 5.00GHz 6.00GHz 10 1 8 0.5 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 1.8GHz f = 0.9GHz 6 0 1 2 3 4 5 6 0 0 10 20 30 40 Ic [mA] 50 60 70 80 V CE [V] Noise figure F = (IC ) VCE = 3V, f = 1.8 GHz Noise figure F = (f) VCE = 3 V, ZS = ZSopt 4.5 2 4 1.8 3.5 1.6 3 1.4 2.5 F [dB] F [dB] 1.2 2 1 1.5 0.8 1 Z = 50 S IC = 20mA I = 5.0mA C 0.5 Z =Z S Sopt 0.6 0 0 10 20 30 c 0.4 40 I [mA] 50 60 70 80 0 1 2 3 f [GHz] 4 5 6 7 2006-04-10 6 BFP540ESD Source impedance for min. noise figure vs. frequency VCE = 3 V, I C = 5 mA / 20 mA 1 1.5 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -1.5 -1 6GHz 0.1 1.8GHz 1 4GHz 5GHz 0.9GHz 1.5 2 3 45 Ic = 5.0mA Ic = 20mA 2 3 4 5 10 2.4GHz 0.2 0.3 0.4 0.5 3GHz -10 -5 -4 -3 -2 2006-04-10 7 Package SOT343 BFP540ESD Package Outline 2 0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 0.1 0.1 MAX. 0.1 A 1.25 0.1 2.1 0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 2006-04-10 8 BFP540ESD Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2006-04-10 9 |
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